Part Number Hot Search : 
BC846F MC10H303 9012DC TPM401 DSP56855 RH0054R LP530 68801
Product Description
Full Text Search
 

To Download 2N7382 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/615 t4-lds-0125 rev. 1 (091145) page 1 of 4 devices levels 2N7382 jansm (3k rad(si)) jansd (10k rad(si)) jansr(100k rad(si)) jansf(300k rad(si)) absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain C source voltage v ds -100 vdc gate C source voltage v gs 20 vdc continuous drain current t c = +25c i d1 -11.0 adc continuous drain current t c = +100c i d2 -7.0 adc max. power dissipation p tl 75 (1) w drain to source on state resistance r ds(on) 0.3 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 0.6 w/c for t c > +25c (2) v gs = -12vdc, i d = -7.0a pre-irradiation electri cal characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = -1madc v (br)dss -100 vdc gate-source voltage (threshold) v ds v gs , i d = -1.0ma v ds v gs , i d = -1.0ma, t j = +125c v ds v gs , i d = -1.0ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 -2.0 -1.0 -4.0 -5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = -80v v gs = 0v, v ds = -80v, t j = +125c i dss1 i dss2 -25 -0.25 adc madc static drain-source on-state resistance v gs = -12v, i d = -7.0a pulsed v gs = -12v, i d = -11.0a pulsed t j = -125c v gs = -12v, i d = -7.0a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0.3 0.35 0.54 diode forward voltage v gs = 0v, i d = -11.0a pulsed v sd -3.0 vdc to-257aa jansm2N7382, jansd2N7382, jansr2N7382, jansf2N7382 see figure 1 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/615 t4-lds-0125 rev. 1 (091145) page 2 of 4 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = -12v, i d = -11.0a v ds = -50v q g(on) q gs q gd 45 10 25 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = -11.0a, v gs = -12vdc, gate drive impedance = 7.5 , v dd = -50vdc t d(on) t r t d(off) t f 30 50 70 70 ns diode reverse recovery time di/dt -100a/s, v dd -50v, i f = -11.0a t rr 250 ns post-irradiation electrical characteristics (3) (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = -1madc v (br)dss -100 vdc gate-source voltage (threshold) v ds v gs , i d = -1.0ma jansr v ds v gs , i d = -1.0ma jansf v gs(th)1 v gs(th)1 -2.0 -2.0 -4.0 -5.0 vdc gate current v gs = 20v, v ds = 0v i gss1 100 nadc drain current v gs = 0v, v ds = -80v i dss1 -25 adc static drain-source on-state resistance v gs = -12v, i d = -7.0a pulsed r ds(on) 0.30 ? diode forward voltage v gs = 0v, i d = -11.0a pulsed v sd -3.0 vdc note: (3) post-irradiation electrical characteristics apply to devices subjected to steady st ate total dose irradiation testing in accordance with mil- std-750 method 1019. separate samples are tested for vg s bias (12v), and vds bias (80v) conditions. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/615 t4-lds-0125 rev. 1 (091145) page 3 of 4 single event effect (see) characteristics: heavy ion testing of the 2N7382 device was completed by similarity of die structure to the 2n7389. the 2n7389 has been characterized at the texas a&m cyclotron. the following soa curve has been established using the elements, let, range, and total energy conditions as shown: 2N7382 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 gate bias, v drain bias, v tamu ar let = 8.1 range=230um total energy=558mev tamu kr let = 26.8 range=170um total energy=1121mev tamu ag let = 40.6 range=150um total energy=1426mev tamu au let=80.2 range=155um total energy=1884mev it should be noted that total energy levels are considered to be a factor in see characterization. comparisons to other datasets should not be based on let alone. please consult factory for more information. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/615 t4-lds-0125 rev. 1 (091145) page 4 of 4 figure 1: case outline and pin co nfiguration for jansm2N7382, jansd2N7382, jansr2N7382 & jansf2N7382 downloaded from: http:///


▲Up To Search▲   

 
Price & Availability of 2N7382

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X